Quantum Anomalous Hall Effect in Graphene-based Heterostructure

نویسندگان

  • Jiayong Zhang
  • Bao Zhao
  • Yugui Yao
  • Zhongqin Yang
چکیده

Quantum anomalous Hall (QAH) effect, with potential applications in low-power-consumption electronics, is predicted in the heterostructure of graphene on the (001) surface of a real antiferromagnetic insulator RbMnCl3, based on density-functional theory and Wannier function methods. Due to the interactions from the substrate, a much large exchange field (about 280 meV) and an enhanced Rashba spin-orbit coupling are induced in graphene, leading to a topologically nontrivial QAH gap opened in the system. The avenues of enhancing the nontrivial gap are also proposed, from which nearly a gap one order large is achieved. Our work demonstrates that this graphene-based heterostructure is an appropriate candidate to be employed to experimentally observe the QAH effect and explore the promising applications.

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عنوان ژورنال:

دوره 5  شماره 

صفحات  -

تاریخ انتشار 2015